A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology.
Noboru ShibataTakahisa KawabeTaira ShibuyaMario SakoKosuke YanagidairaToshifumi HashimotoHiroki DateManabu SatoTomoki NakagawaJunji MushaTakatoshi MinamotoKazushige KandaMizuki UdaDai NakamuraKatsuaki SakuraiTakahiro YamashitaJieyun ZhouRyoichi TachibanaTeruo TakagiwaTakahiro SugimotoMasatsugu OgawaYusuke OchiTakahiro ShimizuKazuaki KawaguchiMasatsugu KojimaTakeshi OgawaTomoharu HashiguchiRyo FukudaMasami MasudaKoichi KawakamiTadashi SomeyaYasuyuki KajitaniYuuki MatsumotoJun NakaiJumpei SatoNamasivayam RaghunathanYee Lih KohShuo ChenJuan LeeHiroaki NasuHiroshi SugawaraKoji HosonoToshiki HisadaHiroshi NakamuraOsamu NagaoNaoki KobayashiMakoto MiakashiYasushi NagadomiTomoaki NakanoPublished in: IEEE J. Solid State Circuits (2020)
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