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Influence of nitrogen buffering on oxygen in indium-tin-oxide capped resistive random access memory with NH3 treatment.

Ji ChenJen-Chung LouKuan-Chang ChangTing-Chang ChangTsung-Ming TsaiChih-Hung Pan
Published in: ASICON (2015)
Keyphrases
  • room temperature
  • random access memory
  • memory access
  • thin film
  • design considerations
  • low voltage
  • magnetic field
  • databases
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  • high temperature
  • low cost
  • high speed