An 11T SRAM Cell for the Dual-Direction In-Array Logic/CAM Operations.
Feng WeiXiaole CuiSunrui ZhangXing ZhangPublished in: IEEE Trans. Circuits Syst. II Express Briefs (2024)
Keyphrases
- random access memory
- content addressable memory
- design considerations
- logical operations
- logic programming
- low voltage
- high speed
- power consumption
- automated reasoning
- data transmission
- multi valued
- real time
- classical logic
- processing elements
- low power
- linear array
- modal logic
- programmable logic
- multidimensional arrays
- embedded dram
- expressive power