Wide dynamic range, 0.8 to 6 GHz LNA in 45 nm digital SOI CMOS.
Jangjoon LeeByunghoo JungPublished in: ISCAS (2011)
Keyphrases
- silicon on insulator
- wide dynamic range
- low power
- dynamic range
- high speed
- charge coupled device
- cmos technology
- image sensor
- metal oxide semiconductor
- power consumption
- focal plane
- high dynamic range
- circuit design
- low cost
- digital camera
- signal processing
- real time
- video camera
- liquid crystal
- nm technology
- power dissipation
- motion blur
- signal to noise ratio