Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps.
Jheng-Jie LiuWen-Jeng HoCho-Chun ChiangChi-Jen TengChia-Chun YuYen-Chu LiPublished in: Sensors (2018)