16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method.
Takanori MatsuzakiTatsuya OnukiShuhei NagatsukaHiroki InoueTakahiko IshizuYoshinori IedaNaoto YamadeHidekazu MiyairiMasayuki SakakuraTomoaki AtsumiYutaka ShionoiriKiyoshi KatoTakashi OkudaYoshitaka YamamotoMasahiro FujitaJun KoyamaShunpei YamazakiPublished in: ISSCC (2015)