Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch With Temperature-Compensated Fast Turn-on Technique for Achieving Switching Frequency of 50 MHz and Slew Rate of 118.3 V/Ns.
Yu-Yung KaoSheng-Hsi HungHsuan-Yu ChenJia-Jyun LeeKe-Horng ChenYing-Hsi LinShian-Ru LinTsung-Yen TsaiPublished in: IEEE J. Solid State Circuits (2021)
Keyphrases
- fully integrated
- high speed
- cmos technology
- structuring elements
- low power
- silicon dioxide
- clock frequency
- field effect transistors
- low cost
- power consumption
- data structure
- power dissipation
- workflow management
- mathematical morphology
- wireless sensor networks
- database
- steady state
- database management systems
- object oriented
- space charge
- case study