Source/drain extension asymmetric counter-doping for suppressing channel leakage in stacked nanosheet transistors.
Qingkun LiLei CaoQingzhu ZhangLianlian LiXuexiang ZhangChuqiao NiuGuanqiao SangYunjiao BaoHuaxiang YinZhenhua WuPublished in: Microelectron. J. (2024)