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Stress immunity enhancement of the SiN uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor by channel fluorine implantation.

Yung-Yu ChenChih-Ren HsiehFang-Yu Chiu
Published in: Microelectron. Reliab. (2012)
Keyphrases
  • field effect transistors
  • dual channel
  • mathematical analysis
  • high quality
  • steady state
  • computer vision
  • signal processing
  • image enhancement
  • high density