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Ambipolar field-effect transistor based on alpha, omega-dihexylquaterthiophene and alpha, omega-diperfluoroquaterthiophene vertical heterojunction.

Gianluca GeneraliRaffaella CapelliStefano ToffaninAntonio FacchettiMichele Muccini
Published in: Microelectron. Reliab. (2010)
Keyphrases
  • field effect transistors
  • steady state
  • mathematical analysis
  • three dimensional
  • support vector
  • dynamic programming
  • image data
  • co occurrence
  • high density