Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application.
Kailiang HuangXinlv DuanJunxiao FengYing SunCongyan LuChuanke ChenGuangfan JiaoXinpeng LinJinhai ShaoShihui YinJiazhen ShengZhaogui WangWenqiang ZhangXichen ChuaiJiebin NiuWenwu WangYing WuWeiliang JingZhengbo WangJeffrey XuGuanhua YangDi GengLing LiMing LiuPublished in: VLSI Technology and Circuits (2022)