Achievable-Rate-Aware Retention-Error Correction for Multi-Level-Cell NAND Flash Memory.
Yingcheng BuYi FangGuohua ZhangJun ChengPublished in: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. (2022)
Keyphrases
- flash memory
- error correction
- solid state
- garbage collection
- buffer management
- random access
- disk drives
- main memory
- file system
- embedded systems
- bit errors
- database systems
- data storage
- error detection
- b tree
- channel coding
- small size
- watermarking scheme
- error correcting
- storage systems
- error detection and correction
- software engineering
- storage devices
- data structure
- reed solomon
- data model
- error control
- database
- magnetic tape
- high dimensional
- index structure