A 640 pW 22 pJ/sample Gate Leakage-Based Digital CMOS Temperature Sensor with 0.25°C Resolution.
Daniel S. TruesdellBenton H. CalhounPublished in: CICC (2019)
Keyphrases
- cmos image sensor
- metal oxide semiconductor
- image sensor
- analog to digital converter
- circuit design
- cmos technology
- dynamic range
- single chip
- heat flow
- solid state
- sensor data
- low power
- high speed
- sensor networks
- real time
- low cost
- power consumption
- data acquisition
- charge coupled device
- data fusion
- high resolution
- parallel processing
- analog vlsi
- low resolution
- neural network
- mixed signal
- sample size
- sensor fusion
- digital camera