Login / Signup
A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs.
Takuo Kikuchi
Mauro Ciappa
Published in:
Microelectron. Reliab. (2013)
Keyphrases
</>
low cost
computational model
mathematical model
probabilistic model
three dimensional
high level
real time
knowledge base
objective function
prior knowledge
high speed
process model
statistical model
conceptual model