Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer.
Mario Santo AlessandrinoBeatrice CarboneFrancesco CordianoBruna MazzaAlfio RussoW. CocoMassimo BoscagliaA. Di SalvoA. LombardoD. ScarcellaElisa VitanzaPatrick FiorenzaPublished in: IRPS (2022)
Keyphrases
- segmentation method
- detection method
- significant improvement
- experimental evaluation
- pairwise
- clustering method
- synthetic data
- high precision
- similarity measure
- evaluation method
- preprocessing
- data analysis
- mathematical model
- probabilistic model
- high accuracy
- statistical analysis
- machine learning
- theoretical analysis
- fully automatic
- spectral analysis
- support vector machine svm
- main contribution
- computationally efficient
- image registration
- d objects
- prior knowledge
- computational complexity
- support vector
- feature extraction
- genetic algorithm