0.25-4 ns 185 MS/s 4-bit pulse-shrinking time-to-digital converter in 130 nm CMOS using a 2-step conversion scheme.

Young Jun Park Fei Yuan

Published in: MWSCAS (2015)

Keyphrases

analog to digital converter
data conversion
low voltage
successive approximation
metal oxide semiconductor
random access memory
nm technology
cmos image sensor
mixed signal
circuit design
cmos technology
protection scheme
high speed
low cost
power consumption
low power
pseudorandom