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A 0.1-6.0-GHz Dual-Path SDR Transmitter Supporting Intraband Carrier Aggregation in 65-nm CMOS.

Yun YinBaoyong ChiZhigang SunXinwang ZhangZhihua Wang
Published in: IEEE Trans. Very Large Scale Integr. Syst. (2015)
Keyphrases
  • power supply
  • high speed
  • cmos technology
  • power consumption
  • metal oxide semiconductor
  • low cost
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  • real time
  • nm technology
  • silicon on insulator
  • shortest path
  • high frequency
  • communication systems
  • circuit design