Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro.
Le Dinh Trang DangTrinh Dinh LinhNgyuen Thanh DatChanghong MinJinsang KimIk-Joon ChangJin-Woo HanPublished in: IRPS (2020)