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A 4GS/s, 8.45 ENOB and 5.7fJ/conversion, digital assisted, sampling system in 45nm CMOS SOI.
Mihai A. T. Sanduleanu
Scott K. Reynolds
Jean-Olivier Plouchart
Published in:
CICC (2011)
Keyphrases
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silicon on insulator
metal oxide semiconductor
cmos technology
circuit design
ibm power processor
random sampling
data conversion
low cost
mixed signal
power consumption
integrated circuit
sample size
high speed
digital content
sampling algorithm
instruction set
cmos image sensor
nm technology