A Charge Domain SRAM Compute-in-Memory Macro With C-2C Ladder-Based 8-Bit MAC Unit in 22-nm FinFET Process for Edge Inference.
Hechen WangRenzhi LiuRichard DorranceDeepak DasalukunteDan LakeBrent R. CarltonPublished in: IEEE J. Solid State Circuits (2023)