Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs.
Patrick FiorenzaFrancesco CordianoMario Santo AlessandrinoAlfio RussoEdoardo ZanettiMario SaggioC. BongiornoFilippo GiannazzoFabrizio RoccafortePublished in: IRPS (2023)