Corrigendum to "Scaling equations for the accurate prediction of CMOS device performance from 180 nm to 7 nm" [Integr. VLSI J. 58. (2017) 74-81].
Aaron StillmakerBevan M. BaasPublished in: Integr. (2019)
Keyphrases
- metal oxide semiconductor
- silicon on insulator
- low cost
- cmos technology
- high speed
- prediction accuracy
- nm technology
- vlsi circuits
- low power
- power dissipation
- signal processing
- highly accurate
- integrated circuit
- prediction error
- single chip
- numerical solution
- neural network
- power consumption
- mathematical model
- artificial neural networks