Login / Signup

Full-band simulation of p-type ultra-scaled silicon nanowire transistors.

Áron SzabóMathieu Luisier
Published in: ESSDERC (2013)
Keyphrases
  • high density
  • high speed
  • low cost
  • space charge
  • low power
  • mathematical model
  • simulation model
  • cmos technology
  • real time
  • multi agent
  • multiresolution
  • mobile robot
  • numerical simulations
  • field effect transistors