Login / Signup
Full-band simulation of p-type ultra-scaled silicon nanowire transistors.
Áron Szabó
Mathieu Luisier
Published in:
ESSDERC (2013)
Keyphrases
</>
high density
high speed
low cost
space charge
low power
mathematical model
simulation model
cmos technology
real time
multi agent
multiresolution
mobile robot
numerical simulations
field effect transistors