25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV.
Dong-Uk LeeKyung Whan KimKwan-Weon KimHongjung KimJu Young KimYoung Jun ParkJae Hwan KimDae Suk KimHeat Bit ParkJin Wook ShinJang Hwan ChoKi Hun KwonMin Jeong KimJaejin LeeKunwoo ParkByong-Tae ChungSung-Joo HongPublished in: ISSCC (2014)