Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories.
Changbeom WooShinkeun KimJaeyeol ParkHyungcheol ShinHaesoo KimGil-Bok ChoiMoon-Sik SeoKeum Hwan NohPublished in: IRPS (2020)