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Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs.

Shuang LiuXiufeng SongJincheng ZhangSheng-Lei ZhaoJun LuoHong ZhangYachao ZhangWeihang ZhangHong ZhouZhihong LiuYue Hao
Published in: IEEE Access (2020)
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