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Gate-All-Around Silicon Nanowire Transistors with channel-last process on bulk Si substrate.

Xiaolong MaHuaxiang YinPeizhen Hong
Published in: IEICE Electron. Express (2015)
Keyphrases
  • field effect transistors
  • high density
  • semiconductor devices
  • cmos technology
  • data sets
  • low cost
  • high speed
  • process model
  • case study
  • low power