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High Reliability GaN FET Gate Drivers for Next-generation Power Electronics Technology.

Xin MingZhi-Wen ZhangZiwei FanYao QinYuan-Yuan LiuBo Zhang
Published in: ASICON (2019)
Keyphrases
  • high reliability
  • high precision
  • low cost
  • power electronics
  • field effect transistors
  • real time
  • genetic algorithm
  • structuring elements
  • high density
  • cmos technology