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Al0.85Ga0.15N/Al0.6Ga0.4N High Electron Mobility Transistors on Native AlN Substrates with >9 MV/cm Mesa Breakdown Fields.

Dolar KhachariyaSeiji MitaPramod ReddySaroj DangiPegah BagheriM. Hayden BreckenridgeRohan SenguptaErhard KohnZlatko SitarRamon CollazoSpyridon Pavlidis
Published in: DRC (2021)
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