Extraction of the trap distribution responsible for SILCs in MOS structures from the measurements and simulations of DC and noise properties.
A. NannipieriGiuseppe IannacconeFelice CrupiPublished in: Microelectron. Reliab. (2004)
Keyphrases
- measurement noise
- measurement errors
- structural analysis
- signal to noise ratio
- noise reduction
- automatic extraction
- social networks
- random noise
- data sets
- gaussian distribution
- spatial distribution
- simulation model
- measurement error
- image noise
- noise model
- noisy data
- numerical simulations
- frequency domain
- probability distribution
- bayesian networks
- neural network