Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell.
Kuo-Fu LeeYiming LiTien-Yeh LiZhong-Cheng SuChin-Hong HwangPublished in: Microelectron. Reliab. (2010)
Keyphrases
- cmos technology
- metal oxide semiconductor
- low power
- power consumption
- leakage current
- low voltage
- nm technology
- silicon on insulator
- field effect transistors
- power reduction
- missing data
- parallel processing
- low cost
- circuit design
- image sensor
- noise level
- noisy data
- stock market
- support vector
- integrated circuit
- noise reduction
- signal to noise ratio
- noise model
- power line
- nano scale
- data acquisition