Comparative evaluation of the short-circuit withstand capability of 1.2 kV silicon carbide (SiC) power transistors in real life applications.
Georgios KampitsisStavros PapathanassiouStefanos N. ManiasPublished in: Microelectron. Reliab. (2015)
Keyphrases
- comparative evaluation
- short circuit
- real life
- power dissipation
- cmos technology
- high density
- power consumption
- thin film
- high power
- low power
- space charge
- transmission line
- scoring methods
- electrical power
- field effect transistors
- high speed
- reactive power
- induction motor
- data center
- low cost
- digital signal processing
- image processing
- silicon on insulator