Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz.
Uppili S. RaghunathanSaurabh SirohiV. RupareliaP. K. SharmaDimitris P. IoannouVibhor JainH. K. KakaraS. GedelaV. VanukuruP. DongmoC. LuceR. HazbunR. KrishnasamyJ. HwangM. LevyK. WelchS. LiuB. CucciS. ColeJ. KantarovskyA. VallettI. McCallum-CookM. YuR. PhelpsA. DivergilioA. SturmM. PetersS. JohnsonR. RasselM. LagerquistM. KerbaughK. NewtonJ. PekarikQ. LiuPublished in: BCICTS (2022)