Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz.

Uppili S. Raghunathan Saurabh Sirohi V. Ruparelia P. K. Sharma Dimitris P. Ioannou Vibhor Jain H. K. Kakara S. Gedela V. Vanukuru P. Dongmo C. Luce R. Hazbun R. Krishnasamy J. Hwang M. Levy K. Welch S. Liu B. Cucci S. Cole J. Kantarovsky A. Vallett I. McCallum-Cook M. Yu R. Phelps A. Divergilio A. Sturm M. Peters S. Johnson R. Rassel M. Lagerquist M. Kerbaugh K. Newton J. Pekarik Q. Liu

Published in: BCICTS (2022)

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