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A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism.

Linan LiWenqiang BaWei WangLing LiGuangwei XuLingfei WangZhuoyu JiCongyan LuWritam Banerjee
Published in: Microelectron. J. (2019)
Keyphrases
  • computational model
  • thin film
  • probabilistic model
  • low cost
  • power consumption
  • multi layer
  • high density