Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM.
Tommaso StecconiYouri PopoffRoberto GuidoDonato Francesco FalconeMattia HalterMarilyne SousaFolkert HorstAntonio La PortaBert J. OffreinValeria BragagliaPublished in: ESSDERC (2022)