A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput.
Guido De SandreLuca BettiniAlessandro PirolaLionel MarmonierMarco PasottiMassimo BorghiPaolo MattavelliPaola ZulianiLuca ScottiGianfranco MastracchioFerdinando BedeschiRoberto GastaldiRoberto BezPublished in: ISSCC (2010)
Keyphrases
- hard disk
- random access
- main memory
- data storage
- flash memory
- read write
- solid state
- data transfer
- file system
- higher throughput
- embedded systems
- data structure
- response time
- index structure
- secondary storage
- external memory
- write operations
- dynamic random access memory
- data access
- routing protocol
- image quality
- disk drives
- database systems