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A 40nm RRAM Compute-in-Memory Macro with Parallelism-Preserving ECC for Iso-Accuracy Voltage Scaling.

Wantong LiJames ReadHongwu JiangShimeng Yu
Published in: ESSCIRC (2022)
Keyphrases
  • high accuracy
  • computational cost
  • classification accuracy
  • error rate
  • computational efficiency
  • computational power
  • power system
  • error correction
  • level parallelism
  • high speed
  • memory space
  • error correcting