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The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS.
Ehsanollah Fathi
Ashkan Behnam
Pouya Hashemi
Behzad Esfandyarpour
Morteza Fathipour
Published in:
IEICE Trans. Electron. (2005)
Keyphrases
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field effect transistors
steady state
high density
mathematical analysis
multi channel
multiple input
database
individual differences
real time
neural network
learning environment
communication channels
prior studies
multiple access