Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V).
Chengkuan WangAnnie KumarKaizhen HanChen SunHaiwen XuJishen ZhangYuye KangQiwen KongZijie ZhengYuxuan WangXiao GongPublished in: VLSI Technology and Circuits (2022)