High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation.
Yutong FanXi LiuRen HuangYu WenWeihang ZhangJincheng ZhangZhihong LiuShenglei ZhaoPublished in: Sci. China Inf. Sci. (2023)