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High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation.

Yutong FanXi LiuRen HuangYu WenWeihang ZhangJincheng ZhangZhihong LiuShenglei Zhao
Published in: Sci. China Inf. Sci. (2023)
Keyphrases
  • low power
  • genetic algorithm
  • genetic algorithm ga
  • low cost
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  • power consumption
  • fitness function
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  • active learning
  • simulated annealing
  • sample size
  • energy dissipation