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TCAD Simulation of a 10nm n-Channel Vertical Double Gate Silicon On Insulator MOSFET for Digital Applications.

Srinivas VarmaCh Pratyusha ChowdariD. JayanthiAsisa Kumar PanigrahiK. Jamal
Published in: ICCCNT (2022)
Keyphrases
  • silicon on insulator
  • cmos technology
  • low power
  • metal oxide semiconductor
  • low voltage
  • signal processing
  • power consumption
  • real time
  • high speed
  • wireless channels
  • ibm power processor
  • dynamic random access memory