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On the Effects of Intra-gate Resistive Open Defects in Gates at Nanoscaled CMOS.

Nachiket RajderkarMarco OttaviSalvatore PontarelliJie HanFabrizio Lombardi
Published in: DFT (2011)
Keyphrases
  • cmos technology
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  • defect detection
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  • field effect transistors
  • nano scale
  • nm technology