Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs.
Qian XieChen ChenMingjun LiuShuang XiaZheng WangPublished in: Sci. China Inf. Sci. (2019)
Keyphrases
- field effect transistors
- noise reduction
- low voltage
- support vector
- noise level
- random noise
- additive noise
- high density
- carrier frequency offset
- feature selection
- channel coding
- noise free
- multi channel
- power consumption
- steady state
- communication channels
- median filter
- noise model
- mathematical analysis
- parallel processing
- noisy data
- impulse response
- random access memory
- input data