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Vacancy Modulated Analog Resistive Switching Memory Device Based on Bilayer of Zn@ZnO/ZnO for Neuromorphic Computing.

Muhammad Umair KhanBaker Mohammad
Published in: ICECS (2023)
Keyphrases
  • thin film
  • high density
  • data conversion
  • floating gate
  • memory usage
  • real time
  • data sets
  • genetic algorithm
  • limited memory
  • circuit design
  • analog vlsi