Divide-by-Three Injection-Locked Frequency Dividers Over 200 GHz in 40-nm CMOS.
Pin-Hao FengShen-Iuan LiuPublished in: IEEE J. Solid State Circuits (2013)
Keyphrases
- power consumption
- clock gating
- cmos technology
- high speed
- clock frequency
- low power
- power dissipation
- nm technology
- dielectric constant
- power reduction
- low cost
- silicon on insulator
- metal oxide semiconductor
- power supply
- power management
- diesel engine
- frequency band
- low voltage
- analog vlsi
- cmos image sensor
- real time
- intel xeon