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Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.
Isabella Rossetto
Matteo Meneghini
Gaudenzio Meneghesso
Enrico Zanoni
Published in:
Microelectron. Reliab. (2013)
Keyphrases
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high correlation
high speed
highly correlated
mobile agents
power consumption
low power
gate insulator