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High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station.

Kouji IshikuraIsao TakenakaHidemasa TakahashiKouichi HasegawaKazunori AsanoNaotaka Iwata
Published in: IEICE Trans. Electron. (2007)
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