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An 0.8-μm high-voltage IC using a newly designed 600-V lateral p-channel dual-action device on SOI.
Kiyoto Watabe
Hajime Akiyama
Tomohide Terashima
Masakazu Okada
Shinji Nobuto
Masao Yamawaki
Sotoju Asa
Published in:
IEEE J. Solid State Circuits (1998)
Keyphrases
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newly designed
high voltage
turbo codes
operating conditions
normal operation
partial discharge
data acquisition
integrated circuit
real time
channel coding
field effect transistors
motion estimation
markov chain
distributed video coding
fading channels
silicon on insulator