-FET device in 14 nm FDSOI technology.

H. El Dirani Yohann Solaro Pascal Fonteneau Philippe Ferrari Sorin Cristoloveanu

Published in: ESSDERC (2015)

Keyphrases

metal oxide semiconductor
silicon on insulator
cost effective
rapid development
case study
data processing
electronic devices
integrated circuit
st century
real time
technological advances
smart spaces
tablet pc
infrared
field effect transistors
low cost
databases