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μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C.
Jih-Chao Chiu
Eknath Sarkar
Yuan-Ming Liu
Yu-Ciao Chen
Yu-Cheng Fan
C. W. Liu
Published in:
VLSI Technology and Circuits (2023)
Keyphrases
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three dimensional
learning environment
information technology
probabilistic model